Rugged spin-polarized electron sources based on negative electron affinity GaAs photocathode with robust Cs2Te coating
نویسندگان
چکیده
منابع مشابه
Polarized Electron Sources
∗ Work supported by Department of Energy contract DE-AC03-765F00515. Polarized electron sources for high energy accelerators took a significant step forward with the introduction of a new laser-driven photocathode source for the SLC in 1992. With an electron beam polarization of >80% and with ~99% uptime during continuous operation, this source is a key factor in the success of the current SLC ...
متن کاملHigh Intensity Polarized Electron Sources*
The status of the polarized electron source development program at SLAC will be reviewed. Emission currents of 60 A, corresponding to a space charge limited current density of 180 A/cm2. have been obtained from GaAs photocathodes. Electron beam polarization 20% greater than that obtainable from GaAs cathodes has been observed from multilayer &As-GaAlAs structures. Work in progress to produce hi...
متن کاملElectron-trapping polycrystalline materials with negative electron affinity.
The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considerin...
متن کاملPhotocathode Performance Measurements for the SLC Polarized Electron Gun*
A low-voltage test system is used to qualify various III-V semiconductor materials as photocathodes for the SLC. The system features a load lock to introduce samples, high pumping speed, a sensitive residual gas -analyzer, and an infrared temperature detector. Heat cleaning, cesiation, and oxidation procedures have been studied to optimize cathode activation for achieving an optimum NEA surface...
متن کاملSpin Relaxation in GaAs: Importance of Electron-Electron Interactions
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov-Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic concentrations and high temperature. We show that the electron-electron scattering in the non-degenerate regime significantly slows down spin relaxation. Thi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5026701